Semiconductor device and method for manufacturing same

Abstract

This semiconductor device includes: a substrate; and a plurality of thin-film diodes which are supported by the substrate and electrically connected in parallel with each other. The thin-film diodes include at least one thin-film diode of a first type (100A), of which the semiconductor layer (10A) has an N-type region (1A), an intrinsic region (5A), and a P-type region (3A) that are arranged in this order in a first direction X within a plane that is parallel to the substrate, and at least one thin-film diode of a second type (100B), of which the semiconductor layer (10B) has a P-type region (3B), an intrinsic region (5B), and an N-type region (1B) that are arranged in this order in the first direction X. With such a configuration adopted, the variation in photocurrent characteristic between the thin-film diodes can be reduced.

Dependencies are inferred from the claim text.