Semiconductor materials, apparatuses and methods
AssigneeThe Board of Trustees of the Leland Stanford Junior University
InventorsPeng Wei, Zhenan Bao, Benjamin D. Naab
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Abstract
Various methods and apparatuses involving salt-based compounds and related doping are provided. In accordance with one or more embodiments, a salt-based material is introduced to a semiconductor material, is heated to generate a neutral compound that dopes the semiconductor material. Other embodiments are directed to semiconductor materials with such a neutral compound as an impurity that affects electrical characteristics therein.
Claims26
An apparatus comprising:
- a compound including nitrogen and at least one of an H atom, an alkyl group, an aryl group, a heteroatom bonded group, and an sp3-hybridized and sp2-hybridized carbon atom bonded group;
- and
- a semiconductor material including the compound configured and arranged as an impurity that effects control of an electrical conductance of the semiconductor material.
A method comprising:
- introducing a salt-based material to a semiconductor material, the salt-based material including at least one of an H atom, an alkyl group, an aryl group, a heteroatom bonded group, and an sp3-hybridized and sp2-hybridized carbon atom bonded group;
- heating the salt-based material to form a neutral compound;
- and
- doping the semiconductor material using the neutral compound.
A method of using an apparatus including a semiconductor material having a compound including nitrogen and at least one of an H atom, an alkyl group, an aryl group, a heteroatom bonded group, and an sp3-hybridized and sp2-hybridized carbon atom bonded group, the method comprising:
- applying a voltage to the doped semiconductor material, and
- using the compound to control an electrical conductance of the semiconductor material, responsive to the applied voltage.
Dependencies are inferred from the claim text.