Multilayer select devices and methods related thereto

A select device comprising:

• a first region having a first conductivity type;
• a second region having a second conductivity type and located adjacent to the first region;
• and
• a third region having the first conductivity type and located adjacent to the second region and, such that the first, second and third regions form a structure located between a first electrode and a second electrode, wherein each of the regions have a thickness configured to achieve a current density in a range from about 1×e4 amps/cm2 up to about 1×e8 amps/cm2 when a voltage in a selected voltage range is applied between the first electrode and the second electrode.

A memory device comprising:

• a select device having:
• a first region having a first conductivity type;
• a second region having a second conductivity type and located adjacent to the first region;
• and
• a third region having the first conductivity type and located adjacent to the second region and, such that the first, second and third regions form a structure located between a first electrode and a second electrode, wherein each of the regions have a thickness configured to achieve a current density in a range from about 1×e4 amps/cm2 up to about 1×e8 amps/cm2 when a voltage in a selected voltage range is applied between the first electrode and the second electrode.