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US 2012/0256289 A1Published application
Forming High Aspect Ratio Isolation Structures
AssigneeMicron Technology, Inc.
InventorsSilvia Borsari, Carla Maria Lazzari
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Abstract
An isolation structure, such as a trench isolation structure, may be formed by forming an aperture in a semiconductor substrate and then filling the aperture with boron. In some embodiments, the aperture filling may use atomic layer deposition. In some cases, the boron may be amorphous boron. The aperture may be a high aspect ratio aperture, such as a trench, in some embodiments.
Claims20
A method comprising:
- forming an aperture in a semiconductor substrate;
- and
- filling the aperture with boron.
A semiconductor device comprising:
- a substrate;
- and
- a filled isolation structure including an aperture in said substrate, said aperture filled with boron.
A method comprising:
- forming a trench in a semiconductor substrate;
- and
- using atomic layer deposition to fill said trench with amorphous boron to form an isolation structure.
A memory comprising:
- a semiconductor substrate;
- a trench isolation structure filled with boron in said semiconductor substrate;
- and
- memory devices formed in said semiconductor substrate.
1 more element
Dependencies are inferred from the claim text.