US 2012/0256276 A1 · Metal Gate and Fabricating Method Thereof

Metal Gate and Fabricating Method Thereof

AssigneeUnited Microelectronics Corp.

InventorsGuang-Yaw Hwang, Chun-Hsien Lin, Hung-Ling Shih, Jiunn-Hsiung Liao, Zhi-Cheng Lee, Shao-Hua Hsu, Yi-Wen Chen, Cheng-Guo Chen, Jung-Tsung Tseng, Chien-Ting Lin, Tong-Jyun Huang, Jie-Ning Yang, Tsung-Lung Tsai, Po-Jui Liao, Chien-Ming Lai, Ying-Tsung Chen, Cheng-Yu Ma, Wen-Han Hung, Che-Hua Hsu

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Abstract

A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a work function metal layer is formed on the gate dielectric layer. An O2 ambience treatment is performed on at least one layer of the multi-layered stack structure. A conductive layer is formed on the multi-layered stack structure.

Claims30

Dependent claims

A method of fabricating a semiconductor device having a metal gate, comprising:

providing a substrate;
forming a gate dielectric layer on the substrate;
forming a multi-layered stack structure comprising a work function metal layer on the gate dielectric layer;
performing an O2 ambience treatment to at least one layer of the multi-layered stack structure;
and
forming a conductive layer on the multi-layered stack structure.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/082,387Filed 7 Apr 2011

Published

11 Oct 2012

Term ends

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Classification16 codes

H10D 64/691
Characterised by the insulator, e.g. by the gate insulator: comprising metallic compounds, e.g. metal oxides or metal silicates
H10D 30/0227
Having source and drain regions or source and drain extensions self-aligned to sides of the gate: having both lightly-doped source and drain…
H10D 30/601
Insulated-gate field-effect transistors [IGFET]: having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
H10D 64/01318
Characterised by the conductor: the conductor comprising a layer of alloy material, compound material or organic material contacting the…