Schottky Diodes Having Metal Gate Electrodes And Methods of Formation Thereof
AssigneeInfineon Technologies AG
InventorsPhilipp Riess, Domagoj Siprak
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Abstract
In one embodiment, the semiconductor device includes a first doped region disposed in a first region of a substrate. A first metal electrode having a first portion of a metal layer is disposed over and contacts the first doped region. A second doped region is disposed in a second region of the substrate. A dielectric layer is disposed on the second doped region. A second metal electrode having a second portion of the metal layer is disposed over the dielectric layer. The second metal electrode is capacitively coupled to the second doped region.
Claims37
A semiconductor device comprising:
- a first doped region disposed in a first region of a substrate;
- a first metal electrode disposed over and contacting the first doped region, the first metal electrode comprising a first portion of a metal layer;
- a second doped region disposed in a second region of the substrate;
- a dielectric layer disposed over the second doped region;
- and
- a second metal electrode disposed over the dielectric layer, the second metal electrode comprising a second portion of the metal layer, the second metal electrode being capacitively coupled to the second doped region.
A semiconductor device comprising:
- a first doped region disposed in a first region of a substrate;
- and
- a metal electrode disposed over and contacting the first doped region, wherein the metal electrode comprises a metal layer, and wherein the metal electrode is surrounded by a spacer.
A transistor comprising:
- a channel region of a first doping type disposed in a substrate;
- a gate dielectric layer disposed over the channel region;
- a gate electrode disposed over the gate dielectric layer;
- a first source/drain region of a second doping type disposed in and/or over the substrate and coupled to the channel region, the second doping type being opposite to the first doping type and
- a first contact electrode disposed over the first source/drain region, wherein the first contact electrode comprises a first portion of a metal layer, and the gate electrode comprises a second portion of the metal layer, and wherein the second portion of the metal layer contacts the first source/drain region.
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate having a first region and a second region;
- forming a gate dielectric layer over at least the second region of the substrate;
- forming a first dummy gate electrode over the first region of the substrate;
- in the second region of the substrate, forming a second dummy gate electrode over the gate dielectric layer;
- forming a first doped region under the first dummy gate electrode;
- forming a first trench and a second trench by removing the first dummy gate electrode and the second dummy gate electrode;
- and
- forming a metal layer over the substrate, wherein a first portion of the metal layer electrically contacts the first doped region in the first trench and a second portion of the metal layer at least partially fills the second trench.
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate having a first region and a second region;
- forming a gate dielectric layer over at least the second region of the substrate;
- forming a first dummy gate electrode over the first region of the substrate, the first dummy gate electrode comprising a first conductive layer and a second conductive layer over the first conductive layer;
- in the second region of the substrate, forming a second dummy gate electrode over the gate dielectric layer, the second dummy gate electrode comprising a third conductive layer and a fourth conductive layer over the third conductive layer;
- forming a first doped region under the first dummy gate electrode;
- forming a first trench by removing the first dummy gate electrode;
- forming a second trench by removing the fourth conductive layer;
- and
- forming a metal layer over the substrate, wherein a first portion of the metal layer electrically contacts the first doped region in the first trench and a second portion of the metal layer at least partially fills the second trench.
Dependencies are inferred from the claim text.