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US 2012/0256261 A1Published application
Semiconductor device and method for making same
AssigneeInternational Business Machines Coroporation
InventorsKangguo Cheng, Bruce B. Doris, Tenko Yamashita, Ying Zhang
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Abstract
A semiconductor device including a substrate having at least one nitride material lined isolation cavity; and a hafnium containing dielectric fill at least partially contained in and at least partially covering at least a portion of the at least one nitride lined isolation cavity.
Claims20
A semiconductor device comprising:
- a substrate having at least one lined isolation cavity;
- and
- a hafnium containing dielectric fill at least partially contained in and at least partially covering at least a portion of the at least one lined isolation cavity.
A method comprising:
- providing a substrate having at least one open-ended cavity;
- lining the cavity;
- at least partially filling the lined cavity with a hafnium containing dielectric;
- and
- forming device layers on the substrate;
- wherein the cavity at least partially isolates at least two semiconductor devices incorporating to the formed device layers.
3 more elements
Dependencies are inferred from the claim text.