Single-sided access device and fabrication method thereof
AssigneeNanya Technology Corporation
InventorsShyam Surthi, Sheng-Wei Yang
Life of this patent
Estimating the term…
Abstract
The present invention provides a single-sided access device including an active fin structure comprising a source region and a drain region; an insulating layer interposed between the source region and the drain region; a trench isolation structure disposed at one side of the active fin structure; a single-sided sidewall gate electrode disposed on the other side of the active fin structure opposite to the trench isolation structure so that the active fin structure is sandwiched by trench isolation structure and the single-sided sidewall gate electrode; and a gate protrusion laterally and electrically extended from the single-sided sidewall gate electrode and embedded between the source region and the drain region under the insulating layer.
Claims20
A single-sided access device, comprising:
- an active fin structure comprising a source region and a drain region;
- an insulating layer interposed between the source region and the drain region;
- a trench isolation structure disposed at one side of the active fin structure;
- a single-sided sidewall gate electrode disposed on the other side of the active fin structure and being opposite to the trench isolation structure so that the active fin structure is sandwiched by trench isolation structure and the single-sided sidewall gate electrode;
- and
- a gate protrusion laterally and electrically extended from the single-sided sidewall gate electrode and embedded under the insulating layer between the source region and the drain region.
A DRAM array, comprising:
- an array of single-sided access devices, each of the single-sided access devices comprising:
- an active fin structure comprising a source region and a drain region;
- an insulating layer interposed between the source region and the drain region;
- a trench isolation structure disposed at one side of the active fin structure;
- a single-sided sidewall gate electrode disposed on the other side of the active fin structure and being opposite to the trench isolation structure so that the active fin structure is sandwiched by trench isolation structure and the single-sided sidewall gate electrode;
- and
- a gate protrusion laterally and electrically extended from the single-sided sidewall gate electrode and embedded under the insulating layer between the source region and the drain region.
Dependencies are inferred from the claim text.