Transistor with buried fins
AssigneeNanya Technology Corporation
InventorsTieh-Chiang Wu, Yi-Nan Chen, Hsien-Wen Liu
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Abstract
The present invention disclosed a recessed gate transistor with buried fins. The recessed gate transistor with buried fins is disposed in an active region on a semiconductor substrate. Two isolation regions disposed in the semiconductor substrate, and sandwich the active region. A gate structure is disposed in the semiconductor substrate, wherein the gate structure includes: an upper part and a lower part. The upper part is disposed in the active region and a lower part having a front fin disposed in one of the two isolation regions, at least one middle fin disposed in the active region, and a last fin disposed in the other one of the two isolation regions, wherein the front fin are both elliptic cylindrical.
Claims12
A recessed gate transistor with buried fins, comprising:
- a semiconductor substrate having an active region therein;
- two isolation regions disposed in the semiconductor substrate, and sandwich the active region;
- a gate structure disposed in the semiconductor substrate, wherein the gate structure comprises:
- an upper part disposed in the active region;
- and
- a lower part having a front fin disposed in one of the two isolation regions, at least one middle fin disposed in the active region, and a last fin disposed in the other one of the two isolation regions, wherein the front fin and the last fin are both elliptic cylindrical;
- a source doping region disposed in the active region at one side of the gate structure;
- and
- a drain doping region disposed in the active region at the other side of the gate structure.
Dependencies are inferred from the claim text.