Recessed trench gate structure and method of fabricating the same
OwnerTieh-Chiang Wu, Yi-Nan Chen +1inventors
InventorsTieh-Chiang Wu, Yi-Nan Chen, Hsien-Wen Liu
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Abstract
A recessed trench gate structure is provided. The recessed trench gate structure includes a substrate with a recessed trench, a gate dielectric layer disposed around an inner surface of the recessed trench, a lower gate conductor disposed at a lower portion of the recessed trench and on the gate dielectric layer. Specially, the lower gate conductor has a convex top surface. A spacer is disposed along an inner side wall of a upper portion of the recessed trench and a upper gate conductor is disposed on the lower gate conductor. The convex top surface can prevent the electric field from distributing not uniformly, so that the GIDL can be prevented.
Claims10
A method of fabricating a recessed trench gate structure, comprising:
- providing a substrate with a recessed trench therein;
- forming a gate dielectric layer on an inner surface of the recessed trench;
- forming a lower gate conductor at a lower portion of the recessed trench, wherein the lower gate conductor has a convex top surface;
- forming a spacer along an inner side wall of a upper portion of the recessed trench;
- and
- filling the upper portion of the recessed trench with a upper gate conductor.
A recessed trench gate structure, comprising:
- a substrate with a recessed trench therein;
- a gate dielectric layer disposed around an inner surface of the recessed trench;
- a lower gate conductor disposed at a lower portion of the recessed trench and on the gate dielectric layer, wherein the lower gate conductor has a convex top surface;
- a spacer disposed along an inner side wall of a upper portion of the recessed trench;
- and
- a upper gate conductor disposed on the lower gate conductor.
Dependencies are inferred from the claim text.