Semiconductor device and method of manufacturing the same
AssigneeCypress Semiconductor Corporation
InventorYukihiro UTSUNO
Life of this patent
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Abstract
A semiconductor device in accordance with one embodiment of the invention can include a semiconductor substrate having a groove, a bit line, a pocket implantation region, a bottom insulating membrane, and a charge accumulation region. The bit line is formed on a side of the groove in the semiconductor substrate and acts as a source and a drain. The pocket implantation region is formed to touch (or contact) the bit line, has a similar conductivity type as the semiconductor substrate, and has a dopant concentration higher than that of the semiconductor substrate. The bottom insulating membrane is formed on and touches (or contacts) a side surface of the groove. The charge accumulation layer is formed on and touches (or contacts) a side surface of the bottom insulating membrane.
Claims20
A semiconductor device comprising:
- a semiconductor substrate comprising a groove;
- a bit line that is formed on a side of the groove in the semiconductor substrate and acts as a source and a drain;
- a pocket implantation region that is formed to contact the bit line, the pocket implantation region has a similar conductivity type as the semiconductor substrate and has a dopant concentration higher than that of the semiconductor substrate;
- a bottom insulating membrane that is formed on and contacts a side surface of the groove;
- and
- a charge accumulation layer that is formed on and contacts a side surface of the bottom insulating membrane.
A semiconductor device comprising:
- a semiconductor substrate comprising a groove;
- a bit line that is formed in the semiconductor substrate and acts as a source and a drain;
- a pocket implantation region that contacts the bit line, the pocket implantation region has a similar conductivity type as the semiconductor substrate and a dopant concentration higher than that of the semiconductor substrate;
- an insulating membrane that is formed on a surface of the groove;
- and
- a charge accumulation layer that is formed on a surface of the insulating membrane.
A semiconductor device comprising:
- a semiconductor substrate comprising a first groove;
- a bit line that is formed in the semiconductor substrate and acts as a source and a drain;
- a pocket implantation region in a bottom surface of the first groove and in contact with the bit line, the pocket implantation region has a similar conductivity type as the semiconductor substrate and a dopant concentration higher than that of the semiconductor substrate;
- a second groove formed in the bottom surface of the first groove that extends beyond the pocket implantation region in the semiconductor substrate, the second groove having a width narrower than that of the first groove;
- an insulating membrane that is formed on a surface of the first groove and a surface of the second groove;
- and
- a charge accumulation layer that is formed on a surface of the insulating membrane.
Dependencies are inferred from the claim text.