Junction Field Effect Transistor With An Epitaxially Grown Gate Structure

A method of fabricating a Schottky field effect transistor (FET) comprising:

• forming a replacement gate structure on a portion of a semiconductor substrate, wherein a source region and a drain region are formed in opposing sides of the portion of the semiconductor substrate that the replacement gate structure is formed on;
• forming a dielectric on the semiconductor substrate having an upper surface that is coplanar with an upper surface of the replacement gate structure;
• removing the replacement gate structure to provide an opening to an exposed portion of the semiconductor substrate;
• and
• depositing a metal gate conductor within the opening in direct contact with the exposed portion of the semiconductor substrate.

A method of fabricating a semiconductor device comprising:

• forming a first replacement gate structure on a first portion of a semiconductor substrate and a second replacement gate structure of a second portion on the semiconductor substrate, wherein a first source region and a first drain region are formed in opposing sides of the portion of the semiconductor substrate that the first replacement gate structure is formed on, and a second source region and a second drain region are formed in opposing sides of the portion of the semiconductor substrate that the second replacement gate structure is formed on;
• forming a dielectric on the semiconductor substrate having an upper surface that is coplanar with an upper surface of the first replacement gate structure and the second replacement gate structure;
• removing the first replacement gate structure to provide a first opening to an exposed portion of the first portion of the semiconductor substrate;
• epitaxially growing a functional gate conductor within the first opening in direct contact with the exposed portion of the semiconductor substrate to provide a junction field effect transistor in the first portion of the semiconductor substrate;
• removing the second replacement gate structure to provide a second opening to an exposed portion of the second portion of the semiconductor substrate;
• and
• forming a functional gate structure including a gate dielectric in direct contact with the exposed portion of the second portion of the semiconductor substrate to provide a metal oxide semiconductor field effect transistor (MOSFET) in the second portion of the semiconductor substrate.

A method of fabricating a semiconductor device comprising:

• providing a fin structure;
• forming a replacement gate structure atop a first portion of the fin structure;
• forming a source region and a drain region in the fin structure on a second portion of the fin structure that is present on opposing sides of the first portion of the fin structure that the replacement gate structure is present on;
• forming a dielectric having an upper surface that is coplanar with an upper surface of the replacement gate structure;
• removing the replacement gate structure to provide an opening to expose the first portion of the fin structure;
• and
• epitaxially growing a functional gate conductor within the opening in direct contact with the first portion of the fin structure.