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US 2012/0256232 A1Published application
Multilayer Rare Earth Device
AssigneeTranslucent, Inc.
InventorsAndrew Clark, F. Erdem Arkun, Michael Lebby
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Abstract
Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.
Claims12
A solid state device comprising;
- a first semiconductor layer;
- a second semiconductor layer;
- and
- a transparent layer consisting of a plurality of rare earth compounds;
- wherein the transparent layer separates the first semiconductor layer and the second semiconductor layer such that the composition of the transparent layer adjacent the first semiconductor layer is different than the composition of the transparent layer adjacent the second semiconductor layer.
2 more elements
A solid state device comprising;
- a first semiconductor layer;
- a second semiconductor layer;
- and
- a transparent layer consisting of a plurality of rare earth compounds;
- wherein the transparent layer separates the first semiconductor layer and the second semiconductor layer such that a predetermined stress is introduced into the portion of the first semiconductor layer adjacent the transparent layer by selecting a composition of the transparent layer adjacent the first semiconductor layer such that the lattice constant, x, of the rare earth compounds adjacent the first semiconductor layer is between about 1.95(y)≦x≦1.99(y) and about 2.01(y)≦x≦2.05(y) wherein y is the lattice constant of the first semiconductor layer and such that a predetermined stress is introduced into the portion of the second semiconductor layer adjacent the transparent layer by selecting a composition of the transparent layer adjacent the second semiconductor layer such that the lattice constant, v, of the rare earth compounds adjacent the second semiconductor layer is between about 1.95(w)≦v≦1.99(w) and about 2.01(w)≦v≦2.05(w) wherein w is the lattice constant of the second semiconductor layer.
2 more elements
Dependencies are inferred from the claim text.