Schottky diode
OwnerNing Qu, Alfred Goerlachinventors
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Abstract
A semiconductor system of a Schottky diode is described having an integrated PN diode as a clamping element, which is suitable in particular as a Zener diode having a breakdown voltage of approximately 20 V for use in motor vehicle generator systems. The semiconductor system of the Schottky diode includes a combination of a Schottky diode and a PN diode. The breakdown voltage of the PN diode is much lower than the breakdown voltage of the Schottky diode, the semiconductor system being able to be operated using high currents during breakdown operation.
Claims24
1-20. (canceled)
A semiconductor system, comprising:
- a Schottky diode having an integrated PN diode as a clamping element, which is suitable as a Zener diode having a breakdown voltage of approximately 20 V for use in a motor vehicle generator system, a breakdown voltage of the PN diode being much lower than a breakdown voltage of the Schottky diode.
A method for manufacturing a semiconductor system, the semiconductor system including a Schottky diode having an integrated PN diode as a clamping element, which is suitable as a Zener diode having a breakdown voltage of approximately 20 V for use in a motor vehicle generator system, a breakdown voltage of the PN diode being much lower than a breakdown voltage of the Schottky diode, the method comprising:
- providing an n+-substrate as a starting material for the semiconductor system;
- producing an n-epitaxial layer using n-epitaxy;
- diffusing n-wells into the n-epitaxial layer;
- producing p+-wells with the aid of diffusion;
- and
- producing metal layers with the aid of metallization on a front side and a rear side of a chip.
A method for manufacturing a semiconductor system, the semiconductor system including a Schottky diode having an integrated PN diode as a clamping element, which is suitable as a Zener diode having a breakdown voltage of approximately 20 V for use in a motor vehicle generator system, a breakdown voltage of the PN diode being much lower than a breakdown voltage of the Schottky diode, the method comprising:
- providing an n+-substrate as a starting material for the semiconductor system;
- producing an n-epitaxial layer using n-epitaxy;
- trench etching up to the n+-substrate;
- filling up the trenches using one of n-doped silicon or polysilicon;
- producing p+-wells with the aid of diffusion;
- and
- producing metal layers with the aid of metallization on a front side and a rear side of a chip.
A method for manufacturing a semiconductor system, the semiconductor system including a Schottky diode having an integrated PN diode as a clamping element, which is suitable as a Zener diode having a breakdown voltage of approximately 20 V for use in a motor vehicle generator system, a breakdown voltage of the PN diode being much lower than a breakdown voltage of the Schottky diode, the method comprising:
- providing an n+-substrate as a starting material for the semiconductor system;
- producing an n-epitaxial layer using n-epitaxy;
- implantating or diffusing n-wells;
- producing the n-epitaxial layer with a second n-epitaxy;
- trench etching up to the n-wells;
- filling up the trenches using one of n-doped silicon or polysilicon;
- diffusing p+-wells;
- producing metal layers with the aid of metallization on a front side and a rear side of a chip.
Dependencies are inferred from the claim text.