Semiconductor device
AssigneeRohm Co., Ltd.
InventorMasatoshi AKETA
Life of this patent
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Abstract
A semiconductor device capable of decreasing a reverse leakage current and a forward voltage is provided. In the semiconductor device, an anode electrode undergoes Schottky junction by being connected to a surface of an SiC epitaxial layer that has the surface, a back surface, and trapezoidal trenches formed on the side of the surface each having side walls and a bottom wall. Furthermore, an edge portion of the bottom wall of each of the trapezoidal trenches is formed to be in the shape bent towards the outside of the trapezoidal trench in the manner that a radius of curvature R satisfies 0.01<L<R<10 L (1) (in the expression (1), L represents the straight-line distance between the edge portions opposite to each other in a width direction of the trench).
Claims18
A semiconductor device, comprising:
- a first conductivity type semiconductor layer, comprising a wide bandgap semiconductor and having a surface and a back surface, wherein trenches each having side walls and a bottom wall are formed on the side of the surface;
- and
- a Schottky electrode, formed to be connected to the surface of the semiconductor layer;
- wherein an edge portion of the bottom wall of the trench has a radius of curvature, R, satisfying the expression (1) as set out below:
- 0.01 L<R<10 L (1)
- (wherein L represents the straight-line distance between the edge portions opposite to each other in a width direction of the trench).
Dependencies are inferred from the claim text.