Recessed termination structures and methods of fabricating electronic devices including recessed termination structures
AssigneeCree, Inc.
InventorsQingchun Zhang, Jason Henning
Life of this patent
Estimating the term…
Abstract
An electronic device includes a drift region, a Schottky contact on a surface of the drift region, and an edge termination structure in the drift region adjacent the Schottky contact. The edge termination structure includes a recessed region that is recessed from the surface of the drift region by a distance d that may be about 0.5 microns.
Claims34
An electronic device, comprising:
- a drift region;
- a Schottky contact on a surface of the drift region;
- an edge termination in the drift region adjacent the Schottky contact, wherein the edge termination comprises a recessed region that is recessed from the surface of the drift region by a distance d and an edge termination structure in the recessed region.
An electronic device having an avalanche rating in excess of 780 mJ/cm2, wherein avalanche rating is defined as VBR×IR×tpulse/chip area, wherein VBR is the breakdown voltage of the device, IR is the reverse current rating of the device and tpulse is a minimum duration of a current pulse that results in device failure.
An electronic device having a leakage voltage that is less than 100 V less than a theoretical avalanche breakdown voltage, wherein the leakage voltage is defined as a reverse voltage on the device that results in a leakage current of at least 100 μA/cm2.
An electronic device, comprising:
- a drift region having a first conductivity type;
- an active region including a first region at a surface of the drift region having a second conductivity type opposite the first conductivity type wherein a p-n junction between the active region and the first region is configured to sustain a voltage when the electronic device is reverse biased;
- and
- an edge termination in the drift region adjacent the active region, wherein the edge termination comprises a recessed region that is recessed from the surface of the drift region by a distance d and an edge termination structure in the recessed region.
A method of forming a semiconductor device, comprising:
- providing a semiconductor layer;
- providing a recessed region in the semiconductor layer that defines a mesa in the semiconductor layer, the mesa including a horizontal mesa surface that is vertically offset from a floor of the recessed region;
- providing a junction termination structure in the recessed region;
- and
- providing a metal contact on the mesa surface.
A Schottky diode, comprising:
- a silicon carbide drift region;
- a Schottky contact on the silicon carbide drift region;
- and
- an edge termination structure in the silicon carbide drift region;
- wherein the edge termination structure is configured to experience avalanche breakdown before a reverse breakdown of the Schottky contact when a reverse bias is applied to the device.
Dependencies are inferred from the claim text.