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US 2012/0256191 A1Published application
Epitaxial growth method and devices
AssigneeMicron Technology, Inc.
InventorsAnton deVilliers, Erik Byers, Scott Sills
Life of this patent
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Abstract
Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.
Claims22
A semiconductor device, comprising:
- a substrate;
- an epitaxial material formed over a substrate, the epitaxial material having a lattice constant that is different from the substrate;
- a textured surface formed on the substrate, wherein a geometry of the textured surface reduces a concentration of crystallographic defects associated with a lattice mismatch between the epitaxial material and the substrate.
A semiconductor device, comprising:
- a textured substrate, wherein the texture includes a number of periodically repeating angled surfaces with a surface normal vector that is between 0 degrees and 90 degrees with respect to a plane of the surface of the substrate;
- and
- a liquid crystal medium in contact with the textured substrate.
A semiconductor device, comprising:
- a substrate;
- an epitaxial gallium nitride material formed over the substrate;
- a textured surface formed on the substrate, wherein a geometry of the textured surface reduces a concentration of crystallographic defects associated with a lattice mismatch between the gallium nitride material and the substrate;
- and
- one or more semiconductor layers formed on the epitaxial gallium nitride layer to form a P-N junction.
2 more elements
Dependencies are inferred from the claim text.