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US 2012/0256182 A1Published application
Method of manufacturing thin film transistor, thin film transistor, and display unit
AssigneeSony Corporation
InventorsToshiaki Arai, Yoshio Inagaki
Life of this patent
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Abstract
A thin film transistor having a crystalline silicon film that is formed by irradiating an amorphous silicon film with a light beam through a photothermal conversion layer and an insulating film to provide the amorphous silicon film with heat treatment.
Claims8
A transistor comprising:
- a substrate;
- an insulating film over the substrate;
- a gate electrode;
- a crystalline layer over the insulating film;
- an insulating layer;
- and
- source and drain electrodes,
- wherein,
- the crystalline silicon film is formed by irradiating an amorphous silicon film with a light beam through a photothermal conversion layer and the insulating film to provide the amorphous silicon film with heat treatment.
6 more elements
Dependencies are inferred from the claim text.