Thin film transistor, organic luminescence display including the same, and method of manufacturing the organic luminescence display

An organic luminescence display comprising:

• a substrate;
• a gate electrode formed over the substrate;
• an active layer insulated from the gate electrode by using a gate insulation film;
• an etch stop layer which is formed over the active layer and comprises a first hole and a second hole for exposing the active layer;
• a first electrode comprising a first part and a second part, wherein the first part is formed over the etch stop layer, and the second part is received in the first hole, contacts the active layer directly, and connects the first part to the active layer;
• a second electrode comprising a first part and a second part, wherein the first part is formed over the etch stop layer, and the second part is received in the second hole, contacts the active layer directly, and connects the first part to the active layer;
• a pixel electrode connected to either the first electrode or the second electrode;
• an opposite electrode facing the pixel electrode;
• an organic luminescence layer formed between the pixel electrode and the opposite electrode,
• wherein at least one portion of the first part of the first electrode and the second part of the first electrode overlap with the gate electrode,
• at least one portion of the first part of the second electrode overlaps with the gate electrode, and
• the second part of the second electrode does not overlap with and is separated from the gate electrode.

A method of manufacturing an organic luminescence display, the method comprising:

• providing a substrate;
• forming a gate electrode over the substrate;
• forming an active layer which is insulated from the gate electrode by a gate insulation film;
• forming an etch stop layer over the active layer, the etch stop layer comprising a first hole and a second hole for exposing the active layer;
• forming a first electrode comprising a first part and a second part, wherein the first part is formed over the etch stop layer, and the second part which is received in the first hole, contacts the active layer directly, and connects the first part to the active layer;
• forming a second electrode comprising a first part and a second part, wherein the first part is formed over the etch stop layer, and the second portion is received in the second hole, contacts the active layer directly, and connects the first part to the active layer;
• forming a pixel electrode connected to either the first electrode or the second electrode;
• forming an opposite electrode facing the pixel electrode;
• and
• forming an organic luminescence layer between the pixel electrode and the opposite electrode,
• wherein at least one portion of the first part of the first electrode and the second part of the first electrode overlap with the gate electrode,
• the first part of the second electrode at least partially overlaps with the gate electrode, and
• the second part of the second electrode does not overlap with and is separated from the gate electrode.