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US 2012/0256168 A1Published application
Semiconductor Devices And Methods Of Manufacturing The Same
AssigneeSamsung Electronics Co., Ltd.
InventorsJiyoul Lee, Eok-su Kim, Won-mook Choi, Sun-kook Kim
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Abstract
According to example embodiments, a semiconductor device includes a first electrode, a second electrode apart from the first electrode, and an active layer between the first and second electrodes. The active layer includes first and second layers, the first layer contacts the first and second electrodes, and the second layer is separated from at least one of the first and second electrodes.
Claims25
A semiconductor device comprising:
- a first electrode;
- a second electrode apart from the first electrode;
- and
- an active layer between the first and second electrodes,
- wherein the active layer includes first and second layers, the first layer contacts the first and second electrodes, and the second layer is separated from at least one of the first and second electrodes.
2 more elements
A transistor comprising:
- a source and a drain separated from each other;
- a channel layer between the source and the drain;
- and
- a gate configured to apply an electric field to the channel layer,
- wherein the channel layer is a multi-layer structure including a first layer and a second layer, the first layer including an organic semiconductor and contacting the source and the drain, and the second layer including a material having higher electrical conductivity than the organic semiconductor and separated from at least one of the source and the drain.
2 more elements
Dependencies are inferred from the claim text.