Graphene electronic device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJin-seong Heo, Hyun-jong Chung, Sun-ae Seo, Sung-hoon Lee, Hee-jun Yang
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Abstract
The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.
Claims26
A graphene electronic device comprising:
- a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode;
- a pair of first metals on the gate oxide, the pair of the first metals separate from each other;
- a graphene channel layer extending between the pair of the first metals and on the pair of the first metals;
- and
- a source electrode and a drain electrode on both edges of the graphene channel layer.
A graphene electronic device comprising:
- a pair of first metals on a substrate, the pair of the first metals separate from each other;
- a graphene channel layer extending between the pair of the first metals and on the pair of the first metals;
- a source electrode and a drain electrode on both edges of the graphene channel layer;
- a gate oxide covering the graphene channel layer between the source electrode and the drain electrode;
- and
- a gate electrode on the graphene channel layer between the source electrode and the drain electrode.
A method of fabricating a graphene electronic device, the method comprising:
- forming a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode;
- forming a first metal layer on the gate oxide, the first metal layer configured to function as a catalyst layer;
- forming a graphene layer on the first metal layer;
- forming a metal protection layer on the graphene layer;
- sequentially patterning the metal protection layer, the graphene layer, and the first metal layer using a first photoresist pattern;
- and
- exposing the graphene layer in a channel formation region by wet etching the metal protection layer and the first metal layer using a second photoresist pattern.
A method of forming a graphene electronic device, the method comprising:
- forming a first metal layer on a substrate, the first metal layer configured to function as a catalyst layer;
- forming a graphene layer on the first metal layer;
- forming a metal protection layer on the graphene layer;
- sequentially patterning the metal protection layer, the graphene layer, and the first metal layer using a first photoresist pattern;
- exposing the graphene layer in a channel formation region by wet etching the metal protection layer and the first metal layer using a second photoresist pattern;
- forming a gate oxide covering the exposed graphene layer;
- and
- forming a gate electrode on the gate oxide.
Dependencies are inferred from the claim text.