Light emitting diode and manufacturing method thereof

An LED comprising:

• a substrate;
• an N-type semiconductor layer arranged on the substrate;
• an active layer comprising a multiple quantum well structure layer arranged on the N-type semiconductor layer and a barrier layer arranged on the multiple quantum well structure layer, each quantum well structure layer comprising a first barrier layer, an InN layer, a GaN layer and an InGaN layer arranged on the N-type semiconductor layer in sequence, the InN layer having an upper surface adjacent to the GaN layer, the upper surface being rough, the InGaN layer having a concentration of In atoms in some regions of the InGaN layer which is higher that that in other regions thereof;
• a P-type semiconductor layer arranged on the barrier layer.

A method for manufacturing the LED, comprising:

• Step 1:
• providing a substrate;
• Step 2:
• forming an N-type semiconductor layer arranged on the substrate;
• Step 3:
• forming a first barrier layer on the N-type semiconductor layer;
• Step 4:
• forming an InN layer on the first barrier layer, and introducing heated hydrogen or ammonia to the InN layer to roughen an upper surface of the InN layer;
• Step 5:
• forming an InGaN layer over the InN layer;
• Step 6:
• forming a second barrier layer on the InGaN layer, and then forming a P-type semiconductor layer on the second barrier layer, wherein the InGaN layer has a concentration of In atoms in some regions of the InGaN layer which is higher that that in other regions thereof.