Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES
AssigneeThe Regents of the University of California
InventorsDaniel F. Feezell, Mathew C. Schmidt, Kwang Choong Kim, Robert M. Farrell, Daniel A. Cohen, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Abstract
A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
Claims18
An optoelectronic device, comprising:
- a nonpolar or semipolar Group III nitride semiconductor light emitting device having an active region comprised of one or more nonpolar or semipolar Group III nitride quantum wells, wherein the quantum wells effectively confine an optical mode to the active region, such that the quantum wells function as an optical waveguide layer for the light emitting device.
A method of fabricating an optoelectronic device, comprising:
- creating a nonpolar or semipolar Group III nitride semiconductor light emitting device having an active region comprised of one or more nonpolar or semipolar Group III nitride quantum wells, wherein the quantum wells effectively confine an optical mode to the active region, such that the quantum wells function as an optical waveguide layer for the light emitting device.
Dependencies are inferred from the claim text.