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US 2012/0256153 A1Published application
Diode for variable-resistance material memories, processes of forming same, and methods of using same
AssigneeMicron Technology, Inc.
InventorsJun Liu, Michael P. Violette
Life of this patent
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Abstract
A variable-resistance material memory (VRMM) device includes a container conductor disposed over an epitaxial semiconductive prominence that is coupled to a VRMM. A VRMM device may also include a conductive plug in a recess that is coupled to a VRMM. A VRMM array may also include a conductive plug in a surrounding recess that is coupled to a VRMM. Apparatuses include the VRMM with one of the diode constructions.
Claims20
A process comprising:
- forming an island in a semiconductive film to include an island first height;
- reducing the island first height to an island second height, wherein the island second height is defined by first and second walls in the semiconductive film first height that are arrayed in a second direction that is orthogonal to the first direction;
- forming a diode plug above and against the island second height, wherein the diode plug also contacts the first and second walls;
- forming an electrode above and on the diode plug;
- and
- coupling the electrode to a variable-resistance material memory (VRMM) cell.
3 more elements
A process comprising:
- forming a spacer on a mask disposed above a film;
- forming an island in the film, wherein the island is defined by the spacer and the mask, and wherein forming the island exposes a first recess with a semiconductive material substrate;
- forming a second recess in the island, wherein the second recess is defined by first, second, third, and fourth walls and a floor in the film;
- forming a diode plug in the second recess, wherein the diode plug contacts the first and second walls and the floor;
- forming an electrode above and on the diode plug;
- and
- coupling the electrode to a variable-resistance material memory (VRMM) cell.
4 more elements
An apparatus comprising:
- a diode plug disposed upon a second-patterned portion of a semiconductive film, wherein the diode plug contacts a first wall, a second wall, a third wall, and a fourth wall of the semiconductive film;
- an electrode disposed above and on the diode plug;
- and
- a variable-resistance material memory (VRMM) cell coupled to the electrode.
1 more element
An apparatus comprising:
- a diode plug disposed on a semiconductive film such that the diode plug and the semiconductive film form a Schottky diode;
- an electrode disposed above and on the diode plug;
- and
- a variable-resistance material memory (VRMM) cell coupled to the electrode.
1 more element
Dependencies are inferred from the claim text.