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US 2012/0248449 A1Published application
Thin film transistor and method of fabricating the same
AssigneeLG Display Co., Ltd.
InventorsGee-Sung Chae, Mi-Kyung Park
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Abstract
A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.
Claims17
A thin film transistor, comprising:
- a gate electrode;
- a multi-coaxial nanowire unit including a plurality of coaxial nanowires disposed between the gate electrode and a substrate;
- a fixing layer between the multi-coaxial nanowire unit and the gate electrode;
- and
- a source electrode and a drain electrode disposed so as to electrically connect to the multi-coaxial nanowire unit,
- wherein the fixing layer includes an organic insulating material and the organic insulating material includes one of benzocyclobutene (BCB) and acrylic resin.
3 more elements
An array substrate including a thin film transistor, comprising:
- a gate electrode;
- a multi-coaxial nanowire unit including a plurality of coaxial nanowires disposed between the gate electrode and a substrate;
- a first source electrode and a first drain electrode disposed so as to electrically connect to the multi-coaxial nanowire unit;
- a second source electrode connected to and overlapping the first source electrode and a second drain electrode connected to and overlapping the first drain electrode;
- and
- a pixel electrode connected to the second drain electrode.
3 more elements
Dependencies are inferred from the claim text.