Processing method for forming structure including amorphous carbon film

A processing apparatus for forming a structure including an amorphous carbon film, the apparatus comprising:

• a reaction chamber configured to accommodate a process object;
• a support member configured to support the process object inside the reaction chamber;
• an exhaust system configured to exhaust gas from inside the reaction chamber;
• a heater provided to the reaction chamber to heat the process object;
• a gas supply system configured to supply a plurality of process gases including a hydrocarbon gas and a silicon source gas into the reaction chamber;
• and
• a control section configured to control an operation of the apparatus and including a processor and a computer readable non-transitory storage medium containing program instructions for execution on the processor, which, when executed by the processor, control the apparatus to conduct a process sequence including:
• placing a target substrate as the process object inside the reaction chamber, the target substrate including an underlying layer on which the structure is to be formed;
• then performing a preliminary treatment on a surface of the underlying layer by use of the silicon source gas serving as a preliminary treatment gas, the preliminary treatment supplying the preliminary treatment gas into the reaction chamber without supplying the hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber and setting the inside of the reaction chamber at a preliminary treatment temperature to activate the preliminary treatment gas only by heating at the preliminary treatment temperature;
• and
• then performing main CVD (chemical vapor deposition) of forming an amorphous carbon film on the underlying layer, the main CVD supplying the hydrocarbon gas into the reaction chamber without supplying the preliminary treatment gas into the reaction chamber while exhausting gas from inside the reaction chamber and setting the inside of the reaction chamber at a main process temperature to activate the hydrocarbon gas only by heating at the main process temperature.