Method for fabricating fine line
AssigneePeking University
InventorsRu Huang, Shuangshuang Pu, Yujie Ai, Zhihua Hao, Runsheng Wang
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Abstract
Disclosed herein is a method for fabricating a fine line, which belongs to a field of ultra-large-scale integrated circuit manufacturing technology. In the invention, three trimming mask processes are performed to effectively improve a profile of the line and greatly reduce the LER (line edge roughness) of the line. At the same time, the invention is combined with a sidewall process, so that a nano-scaled fine line can be successfully fabricated and precisely controlled to 20 nm. Thus, a nano-scaled line with an optimized LER can be fabricated over the substrate.
Claims5
A method for fabricating a fine line, including the following steps:
- (1) fabricating a support layer for a sidewall process over a substrate, this step includes the following steps:
- (a) depositing a silicon nitride film over the substrate;
- (b) coating a photoresist onto the silicon nitride film, and performing a photolithography process to define a region to be used as the support layer;
- (c) performing a dry trimming process for the photoresist;
- (d) performing a dry etching process to transfer the pattern of the photoresist onto the silicon nitride film;
- (e) removing the photoresist to fabricate the support layer of silicon nitride over the substrate;
- (2) fabricating sidewalls of silicon oxide over the substrate, this step includes the following steps:
- (a) depositing a silicon oxide film over the substrate and the silicon nitride film used as the support layer;
- (b) etching the silicon oxide film by using a dry etching process;
- (c) performing a wet etching process on the support layer of silicon nitride;
- (d) performing a wet trimming process on the sidewalls of silicon oxide film;
- and
- (3) obtaining a nano line with a significantly improved LER over the substrate material, this step includes the following steps:
- (a) etching the substrate material by using an anisotropic dry etching process to form a nano line of the substrate material;
- (b) removing the mask of silicon oxide on top by using a wet etching process.
Dependencies are inferred from the claim text.