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US 2012/0238092 A1Published application
Method to alter silicide properties using gcib treatment
AssigneeTEL Epion Inc.
InventorsNoel Russell, John J. Hautala, John Gumpher
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Abstract
A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.
Claims20
A method for silicide formation on a substrate, comprising:
- irradiating at least a portion of a substrate with a first gas cluster ion beam (GCIB) to modify, amorphize, and/or dope said portion of said substrate;
- depositing a metal-containing layer over said portion of said substrate following said irradiating with said first GCIB;
- reacting said metal-containing layer with said portion of said substrate to form a silicide region;
- and
- irradiating said portion of said substrate with a second gas cluster ion beam (GCIB) following said depositing said metal-containing layer.
2 more elements
A method for silicide formation on a substrate, comprising:
- irradiating at least a portion of a substrate with a gas cluster ion beam (GCIB) to modify, amorphize, and/or dope said portion of said substrate, wherein said GCIB contains Si;
- depositing a metal-containing layer over said portion of said substrate following said irradiating with said GCIB;
- and
- reacting said metal-containing layer with said portion of said substrate to form a silicide region.
1 more element
Dependencies are inferred from the claim text.