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US 2012/0238084 A1Published application
Method of Forming Epitaxial Based Integrated Circuit
AssigneeAthenaeum, LLC
InventorEric Ting-Shan Pan
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Abstract
A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Claims20
A method of forming an epitaxial based integrated circuit comprising:
- forming a thin film epitaxial layer situated within a non-semiconductor assembly template substrate having a top surface and bottom surface;
- forming one or more semiconductor layers situated on said top surface and/or said bottom surface of said thin film epitaxial layer and defining one or more active devices.
A method of forming an epitaxial based integrated circuit comprising:
- providing a seed substrate;
- forming a sacrificial layer on said seed substrate;
- forming a thin film epitaxial layer situated on said sacrificial layer and within a first non-semiconductor assembly template substrate having a top surface and bottom surface;
- forming one or more semiconductor layers with a second non-semiconductor assembly substrate that is situated on said top surface and/or said bottom surface of said thin film epitaxial layer and defining one or more active devices;
- removing said sacrificial layer so as to transfer said thin film epitaxial layer and said one or more active devices off of said seed substrate;
- wherein after manufacture of the epitaxial based integrated circuit said seed substrate can be used for manufacture of a separate thin film epitaxial layer.
3 more elements
Dependencies are inferred from the claim text.