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US 2012/0238083 A1Published application
Method of Forming Epitaxial Semiconductor Structure
AssigneeAthenaeum, LLC
InventorEric Ting-Shan Pan
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Abstract
A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Claims20
A method of forming an epitaxial semiconductor structure comprising the steps:
- providing a solid substrate comprised substantially of non-semiconductor material including a plurality of openings forming an assembly template for one or more epitaxial layers;
- forming a first thin film epitaxial layer situated within said plurality of openings and defining a multidimensional structure integrated within said solid substrate;
- forming a first semiconductor layer situated on said solid substrate and/or said first thin film epitaxial layer and defining one or more active devices;
- forming a second thin film epitaxial layer situated on and defining a p-n junction with said first thin film epitaxial layer.
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A method of forming an epitaxial semiconductor structure comprising the steps:
- providing a solid substrate comprised substantially of non-semiconductor material including a plurality of openings forming a first assembly template for one or more epitaxial layers;
- providing a seed substrate;
- forming a first thin film epitaxial layer situated within said plurality of openings and defining a multidimensional structure integrated within said first assembly substrate and situated in contact with said seed substrate;
- forming a first semiconductor layer situated on said first assembly substrate and/or said first thin film epitaxial layer and defining one or more active devices;
- forming a second thin film epitaxial layer situated on and defining a p-n junction with said first thin film epitaxial layer using a second assembly template;
- controlling a temperature of said LPE at or below a re-melting temperature of the bulk of said first thin film epitaxial layer so as to separate said layer from said seed substrate.
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Dependencies are inferred from the claim text.