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US 2012/0238078 A1Published application
Method of Integrating Epitaxial Film Onto Assembly Substrate
AssigneeAthenaeum, LLC
InventorEric Ting-Shan Pan
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Abstract
A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Claims20
A method of forming an epitaxial thin film comprising:
- providing an assembly substrate including a plurality of openings and defining a first pattern for an epitaxial layer;
- directing a liquid phase epitaxial material into said plurality of openings;
- maintaining a crystalline seed substrate in fixed contact with said assembly substrate for at least a first duration in which said liquid phase material is introduced into said plurality of openings;
- arranging said assembly substrate and said seed substrate such that epitaxial layer growth is initiated at a surface region of said seed substrate situated at a bottom of said plurality of openings and can be controlled until said epitaxial layer is formed within said first pattern.
1 more element
A method of forming an epitaxial thin film comprising:
- providing an assembly substrate including a plurality of openings and defining a first pattern for an epitaxial layer;
- directing a liquid phase epitaxial (LPE) material into said plurality of openings;
- maintaining a crystalline seed substrate in fixed contact with said assembly substrate for at least a first duration in which said liquid phase material is introduced into said plurality of openings;
- controlling a temperature of said LPE material and arranging said assembly substrate and said seed substrate such that epitaxial layer growth is initiated at a surface region of said seed substrate situated at a bottom of said plurality of openings and can be controlled until said epitaxial layer is formed within said first pattern.
1 more element
Dependencies are inferred from the claim text.