Method and Apparatus for Forming a III-V Family Layer

A method, comprising:

• growing, in a metal-organic chemical vapor deposition (MOCVD) chamber of a multi-chamber cluster fabrication tool, a III-V compound layer over a semiconductor substrate;
• thereafter transferring, through a transfer chamber of the multi-chamber cluster fabrication tool, the semiconductor substrate from the (MOCVD) chamber to a low-pressure chemical vapor deposition (LPCVD) chamber of the multi-chamber cluster fabrication tool, wherein the transfer chamber is configured to be substantially free of oxygen and silicon;
• and
• growing, in the LPCVD chamber, a passivation layer over the III-V compound layer.

A method, comprising:

• forming a III-V family layer over a semiconductor wafer in a first deposition module;
• moving the semiconductor wafer to a second deposition module through a transfer module, the transfer module enclosing a space that is substantially free of oxygen and silicon;
• and
• forming a passivation layer over the III-V family layer in the second deposition module.