Methods and apparatus for conformal doping
AssigneeApplied Materials, Inc.
InventorsKARTIK SANTHANAM, MARTIN A. HILKENE, MANOJ VELLAIKAL, MARK R. LEE, MATTHEW D. SCOTNEY-CASTLE, PETER I. PORSHNEV
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Abstract
Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of doping a substrate may include forming a dopant region on a substrate by implanting one or more dopant elements into the dopant region of the substrate using a plasma doping process; forming a cap layer atop the dopant region; annealing the dopant region after forming the cap layer; and removing the cap layer after annealing the dopant region.
Claims18
A method of doping a substrate, comprising:
- forming a dopant region on a substrate by implanting one or more dopant elements into the dopant region of the substrate using a plasma doping process;
- forming a cap layer atop the dopant region;
- annealing the dopant region after forming the cap layer;
- and
- removing the cap layer after annealing the dopant region.
A method of doping a substrate, comprising:
- forming a dopant region on a substrate by implanting one or more dopant elements into the dopant region of the substrate in a plasma doping process;
- forming a cap layer atop the dopant region;
- reducing a thickness of the cap layer;
- annealing the dopant region after reducing the thickness of the cap layer;
- and
- removing the cap layer from atop the dopant region after annealing the dopant region.
Dependencies are inferred from the claim text.