Method and Apparatus for Plasma Dicing a Semi-conductor Wafer
AssigneePlasma-Therm LLC
InventorsChris Johnson, David Johnson, Russell Westerman
Life of this patent
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Abstract
The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
Claims44
A method for plasma dicing a substrate, the method comprising:
- providing a process chamber having a wall;
- providing a plasma source adjacent to the wall of the process chamber;
- providing a work piece support within the process chamber;
- placing the substrate on a carrier support to form a work piece;
- loading the work piece onto the work piece support;
- providing a cover ring disposed above the work piece;
- generating a plasma through the plasma source;
- and
- etching the work piece through the generated plasma.
A method for plasma dicing a substrate, the method comprising:
- providing a process chamber having a wall;
- providing a plasma source adjacent to the wall of the process chamber;
- providing a work piece support within the process chamber, the work piece support having an electrostatic chuck;
- placing the substrate on a carrier support to form a work piece;
- loading the work piece onto the work piece support;
- clamping the work piece to the work piece support through the electrostatic chuck;
- providing a cover ring disposed above the work piece;
- generating a plasma through the plasma source;
- etching the work piece through the generated plasma;
- and
- controlling temperature of the cover ring during the etching step.
A method for plasma dicing a substrate, the method comprising:
- placing the substrate on a carrier support to form a work piece;
- loading the work piece into a plasma processing chamber;
- exposing the work piece in the plasma processing chamber to a first plasma etch process using a first etchant gas;
- terminating the first plasma etch process after singulation;
- and
- exposing the work piece in the plasma processing chamber to a second plasma etch process using a second etchant gas.
An apparatus for plasma dicing a substrate comprising:
- a process chamber having a wall;
- a plasma source adjacent to the wall of the process chamber;
- a work piece support within the process chamber, the work piece support having an electrostatic chuck;
- a work piece having the substrate on a carrier support, the work piece being placed onto the work piece support;
- and
- a cover ring disposed above the work piece, the cover ring is thermally coupled to the wall of the process chamber.
A method for plasma dicing a substrate, the method comprising:
- providing a process chamber having a wall;
- providing a plasma source adjacent to the wall of the process chamber;
- providing a work piece support within the process chamber;
- placing the substrate on a carrier support to form a work piece;
- loading the work piece onto the work piece support;
- generating a plasma through the plasma source;
- and
- etching the work piece through the generated plasma.
An apparatus for plasma dicing a substrate comprising:
- a process chamber having a wall;
- a plasma source adjacent to the wall of the process chamber;
- a work piece support within the process chamber, the work piece support having an electrostatic chuck;
- and
- a work piece having the substrate on a carrier support, the work piece being placed onto the work piece support.
Dependencies are inferred from the claim text.