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US 2012/0238069 A1Published application
Esd network circuit with a through wafer via structure and a method of manufacture
AssigneeInternational Business Machines Corporation
InventorSteven H. VOLDMAN
Life of this patent
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Abstract
A method includes forming an ESD active device on a substrate, forming a ground plane on a backside of the substrate and forming at least one through wafer via electrically connected to a negative power supply of the ESD active device and the ground plane to provide a low series resistance path to the substrate.
Claims7
A method comprising:
- forming an ESD active device on a substrate;
- forming a ground plane on a backside of the substrate;
- forming at least one through wafer via structure to provide a low series resistance path to the substrate;
- and
- forming at least one additional through wafer via structure,
- wherein at least one of the at least one through wafer via structure and at least one additional through wafer via structure is in contact with the ground plane and provides a guard ring to prevent minority carrier migration
3 more elements
A method comprising:
- forming an ESD active device on a substrate and electrically connected between an input and at least one power rail;
- forming at least one through wafer via structure to provide a low series resistance path to the substrate;
- and
- forming a ground plane on a backside of the substrate and electrically connected to the at least one through wafer structure.
1 more element
A method comprising:
- forming an ESD active device on a substrate and electrically connected between an input and at least one power rail;
- forming at least one through wafer via structure to provide a low series resistance path to the substrate;
- and
- forming at least one inductor electrically connected to the at least one through wafer via structure.
1 more element
Dependencies are inferred from the claim text.