Semiconductor device including a stress film
AssigneePanasonic Corporation
InventorsMasafumi TSUTSUI, Hiroyuki Umimoto, Kaori Akamatsu
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Abstract
A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.
Claims3
1-12. (canceled)
A method for fabricating a semiconductor device, comprising the steps of:
- a) forming over an active region of a semiconductor substrate an internal stress film having a stress internally;
- b) forming a groove reaching the active region through the internal stress film;
- c) forming a gate insulating film over part of a surface of the semiconductor substrate exposed at a bottom surface of the groove;
- d) filling, after the step c), the groove with a conductive film, thereby forming a gate electrode;
- and
- e) performing, after the internal stress film has been removed, ion implantation of an impurity of a first conductive type to the active region using the gate electrode as a mask, thereby forming source/drain regions.
Dependencies are inferred from the claim text.