Method of fabricating complementary metal-oxide-semiconductor (cmos) device
AssigneesLam Research Corporation, United Microelectronics Corp.
InventorsChiu-Hsien YEH, Chan-Lon YANG, Chin-Cheng CHIEN, Lien-Fa HUNG, Yun-Cheng KAO
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Abstract
A method of fabricating a MOS device comprises steps as follows: An interfacial layer, a high-k dielectric layer and a cover layer on a substrate are sequentially formed. Then an in-situ wet etching step is performed by sequentially using a first etching solution to etch the cover layer and using a second etching solution to etch the high-k dielectric layer and the interfacial layer until the substrate is exposed, wherein the second etching solution is a mixed etching solution containing the first etching solution.
Claims20
A method of fabricating a MOS device, comprising:
- sequentially forming an interfacial layer, a high-k dielectric layer and a cover layer on a substrate;
- and
- performing an in-situ wet etching step by sequentially using a first etching solution to etch the cover layer and using a second etching solution to etch the high-k dielectric layer and the interfacial layer until the substrate is exposed, wherein the second etching solution is a mixed etching solution containing the first etching solution.
A method of fabricating a MOS device, comprising:
- sequentially forming an interfacial layer, a high-k dielectric layer and a patterned mask on a substrate;
- and
- performing an in-situ wet etching step by sequentially using an etching solution to etch the high-k dielectric layer and the interfacial layer until the substrate is exposed and an other etching solution, wherein the etching solution is a mixed etching solution containing the other etching solution.
A method of fabricating a MOS device, comprising:
- sequentially forming an interfacial layer, a high-k dielectric layer and a patterned mask on a substrate;
- and
- performing an in-situ wet etching step by using an etching solution to etch the high-k dielectric layer and the interfacial layer until the substrate is exposed.
Dependencies are inferred from the claim text.