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US 2012/0238064 A1Published application
Enhancement-mode high-electron-mobility transistor and the manufacturing method thereof
AssigneeNational Chiao Tung University
InventorsEDWARD YI CHANG, Chia-Hua Chang, Yueh-Chin Lin
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Abstract
This invention discloses an enhancement-mode high-electron-mobility transistor and the manufacturing method thereof. The transistor comprises an epitaxial buffer layer on a substrate, a source and drain formed in the buffer layer, a PN-junction stack formed on the buffer layer and located between the source and drain, and a gate formed on the PN-junction stack, wherein the PN-junction stack is composed of alternating layers of a P-type semiconductor and an N-type semiconductor.
Claims9
A method for fabricating an enhancement-mode HEMT comprising:
- providing a semiconductor substrate that is with a buffer layer thereon;
- forming a PN-junction stack on the buffer layer, wherein the PN-junction stack is composed of alternating layers of a P-type semiconductor and an N-type semiconductor;
- etching the PN-junction stack that is out of the predetermined area of a gate;
- forming a source on one side of the PN-junction stack and a drain on the other side thereof, wherein both the source and drain are formed on the buffer layer;
- and
- forming the gate on the PN-junction stack.
3 more elements
Dependencies are inferred from the claim text.