Method for Removing at least Sections of a Layer of a Layer Stack
AssigneeManz Automation AG
InventorsVasile Raul Moldovan, Christoph Tobias Neugebauer
Life of this patent
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Abstract
In a method for removing at least sections of at least one semiconductor layer (4) of a layer stack (1), an optically dense metallisation layer (3) is heated such that the semiconductor layer located on top is detached.
Claims11
A method for removing at least regions of at least one semiconductor layer (4) of a layer stack (1), in which an optically dense metallization layer (3) is heated such that the semiconductor layer located thereabove is detached.
A method according to any one of the preceding claims, characterized in that the optically dense metallization layer (3) is heated through one or more optically transparent layers (2).
A method according to any one of the preceding claims, characterized in that the heating is achieved by means of a laser (11, 18).
A method according to any one of the preceding claims, characterized in that the heating is achieved by means of an ns laser (11, 18).
A method according to any one of the preceding claims, characterized in that the heating is achieved by means of a pulsed laser (11, 18).
A method according to any one of the preceding claims, characterized in that the laser beam is represented on the layer stack (1) by means of an optical light guide having a square or round cross-section.
A method according to any one of the preceding claims, characterized in that the optically dense metallization layer (3) is heated such that it evaporates.
A method according to any one of the preceding claims, characterized in that edge deletion of a solar cell is carried out.
A method according to any one of the preceding claims, characterized in that solar cell structuring is carried out.
Dependencies are inferred from the claim text.