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US 2012/0238046 A1Published application
Led mesa sidewall isolation by ion implantation
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsSan Yu, Atul Gupta
Life of this patent
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Abstract
A method of LED manufacturing is disclosed. A coating is applied to a mesa. This coating may have different thicknesses on the sidewalls of the mesa compared to the top of the mesa. Ion implantation into the mesa will form implanted regions in the sidewalls in one embodiment. These implanted regions may be used for LED isolation or passivation.
Claims20
A method of ion implantation comprising:
- implanting ions into a portion of a structure through a coating on said structure, said structure defining a first surface and a plurality of second surfaces disposed adjacent to said first surface, wherein said ions penetrate said coating to a second depth in said second surfaces different from a first depth in said first surfaces.
A method of LED manufacturing comprising:
- depositing a coating on a structure that defines a first surface and a plurality of second surfaces that are at an angle relative to said first surface;
- performing a first implantation of ions through said coating;
- and
- forming implanted regions only within said second surfaces.
1 more element
A method of LED manufacturing comprising:
- depositing a coating on a mesa defining a top surface and at least two sidewall surfaces, said mesa comprising an nGaN layer, a pGaN layer, and a quantum well, said coating defining a first thickness on said top surface and a second thickness on said sidewall surfaces, wherein said second thickness is less than said first thickness;
- implanting ions through said coating into said mesa in at least one ion implantation step, wherein said implanting is at an angle that is not perpendicular to said top surface;
- forming implanted regions only within said sidewall surfaces of said mesa;
- and
- removing said coating from said mesa.
2 more elements
Dependencies are inferred from the claim text.