Method for manufacturing semiconductor device and reinforcing plate
AssigneeKabushiki Kaisha Toshiba
InventorHironobu SHIBATA
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AssigneeKabushiki Kaisha Toshiba
InventorHironobu SHIBATA
Estimating the term…
According to one embodiment, in a method for manufacturing a semiconductor device, a semiconductor substrate having a plurality of first pads is covered with a bonding material. The semiconductor substrate is attached to a reinforcing plate having a plurality of first through-holes corresponding respectively to the first pads. The semiconductor substrate is removed until becoming a predetermined thickness. An electrode film is formed on the semiconductor substrate. A remover of the bonding material is injected into the first through-holes so as to expose the first pads. A probe is in contact with the exposed first pads through the first through-holes so as to measure a current flowing between the probe and the electrode film. The remover is injected into the first through-holes so as to separate the semiconductor substrate from the reinforcing plate. The semiconductor substrate is diced into a plurality of chips.
A method for manufacturing a semiconductor device, comprising:
A reinforcing plate to reinforce a semiconductor substrate having a first surface, a second surface opposite to the first surface, and a plurality of first pads selectively formed on the first surface side, comprising:
Dependencies are inferred from the claim text.