Loading patent…
AssigneesMitsubishi Chemical Corporation, The Japan Steel Works, Ltd., Tohoku University
InventorsYUTAKA MIKAWA, MAKIKO KIYOMI, YUJI KAGAMITANI, TORU ISHIGURO, YOSHIHIKO YAMAMURA
Estimating the term…
To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 μm.
A method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, wherein out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 μm.
A vessel for production of a nitride crystal, which is a vessel for charging a mineralizer-containing solution therein and producing a nitride crystal by an ammonothermal method, wherein out of the surface of said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 μm.
The vessel for production of a nitride crystal as claimed in 8, wherein at least a part of the surface of crystal growth region in said vessel is constituted by said metal or alloy.
A member, which is a member disposed in a system for producing a nitride crystal by an ammonothermal method by using a mineralizer-containing solution, wherein at least a part of the surface of said member is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 μm.
Dependencies are inferred from the claim text.