Lasers with quantum wells having high indium and low aluminum with barrier layers having high aluminum and low indium with reduced traps

The method of claim 15, comprising forming the VCSEL to include:

• one or more quantum wells having InGaAs, with In ranging from about 2% to about 11% and Ga ranging from about 89% to about 98%, or one or more quantum wells having AlInGaAs, with Al ranging from about 6% to about 11% with In ranging from about 8% to about 20% and Ga ranging from about 69% to about 86%;
• one or more quantum well barriers having AlGaAs or Al(In)GaAs, with Al ranging from about 25% to about 40% and with In ranging from about 0 to about 2% and with Ga ranging from about 60% to about 75%;
• and
• one or more transitional layers between the quantum wells and quantum well barriers, the transitional layers having GaAs, GaAsP, or GaAsPSb.

A method for preparing a vertical cavity surface emitting laser (VCSEL) comprising:

• growing an active region by:
• (a) growing a quantum well barrier having Al(In)GaAs;
• (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs;
• (c) growing a quantum well layer having (Al)InGaAs;
• (d) growing another transitional layer having one or more of GaP, GaAsP, or GaAs;
• (e) repeating processes (a) through (d) over a plurality of cycles;
• and
• (f) growing a quantum well barrier having Al(In)GaAs.

A vertical cavity surface emitting laser (VCSEL) comprising:

• one or more quantum wells having high In and low Al;
• two or more quantum well barriers having high Al and low In bounding the one or more quantum well layers;
• and
• one or more transitional monolayers deposited between each quantum well layer and quantum well barrier, wherein the quantum wells, barriers and transitional monolayers are substantially devoid of traps.