Non-volatile memory cell
AssigneeeMemory Technology Inc.
InventorsTe-Hsun Hsu, Wei-Ren Chen, Wen-Hao Ching, Wen-Chuan Chang
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Abstract
The non-volatile memory cell includes a coupling device and a first select transistor. The coupling device is formed in a first conductivity region. The first select transistor is serially connected to a first floating gate transistor and a second select transistor, all formed in a second conductivity region. An electrode of the coupling device and a gate of the first floating gate transistor are a monolithically formed floating gate; wherein the first conductivity region and the second conductivity region are formed in a third conductivity region; wherein the first conductivity region, the second conductivity region, and the third conductivity region are wells.
Claims31
A non-volatile memory cell comprising:
- a coupling device formed in a first conductivity region;
- and
- a first select transistor serially connected to a first floating gate transistor and a second select transistor, all formed in a second conductivity region;
- wherein an electrode of the coupling device and a gate of the first floating gate transistor are a monolithically formed floating gate;
- wherein the first conductivity region and the second conductivity region are formed in a third conductivity region;
- wherein the first conductivity region, the second conductivity region, and the third conductivity region are wells.
Dependencies are inferred from the claim text.