Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same

A magnetic tunneling junction device comprising:

• a fixed magnetic structure;
• a free magnetic structure;
• and
• a tunnel barrier between the fixed magnetic structure and the free magnetic structure,
• at least one of the fixed magnetic structure and the free magnetic structure including
• a perpendicular magnetization preserving layer,
• a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and
• a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer;
• wherein the magnetic layer has an oxygen affinity less than the perpendicular magnetization inducing layer.