Semiconductor light emitting device and manufacturing method

A semiconductor light-emitting device comprising:

• a base board having a mounting surface and a conductor pattern formed on the mounting surface;
• a plurality of semiconductor light-emitting chips having an outside surface and at least one pair of adjacent surfaces, and each of the semiconductor light-emitting chips having a bottom surface and a top surface, being formed in a substantially cubic shape and including chip electrodes adjacent the bottom surface, the chip electrodes electrically connected to a respective portion of the conductor pattern of the base board via solder bumps, and the plurality of semiconductor light-emitting chips aligned so that each of the at least one pair of adjacent surfaces is substantially parallel with respect to each other;
• an optical plate having a side surface, a bottom surface, a middle region, a peripheral region and an edge located between the side surface and the bottom surface, the peripheral region surrounding the middle region and including the edge of the optical plate, the optical plate being located over the top surface of each of the semiconductor light-emitting chips so that the middle region of the optical plate overlaps the top surface of each of the semiconductor light-emitting chips;
• a wavelength converting layer having a thickness, at least one side surface and at least one concave surface, the wavelength converting layer including at least one phosphor and disposed between the outside surface of the semiconductor light-emitting chips and the edge of the optical plate so that the side surface of the wavelength converting layer extends from the outside surface of the semiconductor light-emitting chips toward the edge of the optical plate, and the concave surface of the wavelength converting layer being located between the at least one pair of adjacent surfaces and formed in a concave shape toward the peripheral region of the optical plate, wherein a density of the at least one phosphor included in the wavelength converting layer that is disposed between the middle region of the optical plate and the top surface of each of the semiconductor light-emitting chips is higher than a density of the phosphor included in the wavelength converting layer that is disposed between the peripheral region of the optical plate and both the outside surface of the semiconductor light-emitting chip and the at least one concave surface of the wavelength converting layer;
• a frame located adjacent the mounting surface of the base board so as to surround the wavelength converting layer and the semiconductor light-emitting chips;
• and
• a reflective material layer having an inclined side surface and at least one convex surface disposed between the frame and both the side surface of the wavelength converting layer and the side surface of the optical plate and between the bottom surface of each of the semiconductor light-emitting chips and the mounting surface of the base board while surrounding the solder bumps, wherein the inclined side surface contacts with the side surface of the wavelength converting layer and extends from the outside surface of the semiconductor light-emitting chips toward the edge of the optical plate, and the at least one convex surface also contacts with the at least one concave surface of the wavelength converting layer and extends toward the peripheral region of the optical plate between the at least one pair of adjacent surfaces of the plurality of semiconductor light-emitting chips.