Semiconductor integrated circuit
AssigneeKabushiki Kaisha Toshiba
InventorTakayuki Hiraoka
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a first electrostatic protection circuit is connected between a first power supply wire and a second power supply wire, a second electrostatic protection circuit is connected between the first power supply wire and a third power supply wire, a first transistor is connected between the second power supply wire and the third power supply wire, a gate control circuit controls a gate potential of the first transistor based on a detection result of a second voltage, a second transistor is connected between the third power supply wire and a gate of the first transistor, and an abnormal voltage detection circuit controls on and off of the second transistor based on a detection result of a third voltage.
Claims20
A semiconductor integrated circuit comprising:
- a first power supply wire that transmits a first voltage;
- a second power supply wire that transmits a second voltage higher than the first voltage;
- a third power supply wire that transmits a third voltage higher than the second voltage;
- a first electrostatic protection circuit connected between the first power supply wire and the second power supply wire;
- a second electrostatic protection circuit connected between the first power supply wire and the third power supply wire;
- a first transistor connected between the second power supply wire and the third power supply wire;
- a gate control circuit that controls a gate potential of the first transistor based on a detection result of the second voltage;
- a second transistor connected between the third power supply wire and a gate of the first transistor;
- and
- an abnormal voltage detection circuit that controls on and off of the second transistor based on a detection result of the third voltage.
A semiconductor integrated circuit comprising:
- a first power supply wire that transmits a first voltage;
- a second power supply wire that transmits a second voltage higher than the first voltage;
- a third power supply wire that transmits a third voltage higher than the second voltage;
- a first electrostatic protection circuit connected between the first power supply wire and the second power supply wire;
- a second electrostatic protection circuit connected between the first power supply wire and the third power supply wire;
- a first transistor connected between the second power supply wire and the third power supply wire;
- a gate control circuit that controls a gate potential of the first transistor based on a detection result of the second voltage;
- and
- a second transistor that is connected between the third power supply wire and a gate of the first transistor and is controlled to be turned on and off based on an internal voltage of the second electrostatic protection circuit.
A semiconductor integrated circuit comprising:
- a first power supply wire that transmits a first voltage;
- a second power supply wire that transmits a second voltage higher than the first voltage;
- a third power supply wire that transmits a third voltage higher than the second voltage;
- a first electrostatic protection circuit connected between the first power supply wire and the second power supply wire;
- a second electrostatic protection circuit connected between the first power supply wire and the third power supply wire;
- a first transistor connected between the second power supply wire and the third power supply wire;
- a gate control circuit that controls a gate potential of the first transistor based on a detection result of the second voltage;
- and
- a second transistor that is connected between the third power supply wire and a gate of the first transistor and makes a gate and a source of the first transistor to be short-circuited before reaching a turn-on voltage of the first transistor.
Dependencies are inferred from the claim text.