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US 2012/0235731 A1Published application
Continuous tunable lc resonator using a fet as a varactor
AssigneeSkyworks Solutions, Inc.
InventorsBin Li, Peter J. Zampardi, JR., Andre G. Metzger
Life of this patent
Estimating the term…
Abstract
A varactor includes a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), in which a back gate of the FET shares an electrical connection with a base of the BJT, and in which a reverse voltage applied to the back gate of the FET creates a continuously variable capacitance in a channel of the FET.
Claims27
A varactor, comprising:
- a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), in which a back gate of the FET shares an electrical connection with a base of the BJT, and in which a reverse voltage applied to the back gate of the FET creates a continuously variable capacitance in a channel of the FET.
A method, comprising:
- applying a reverse voltage to a back gate of a field effect transistor (FET) integrated with a bipolar junction transistor (BJT), in which the back gate of the FET shares an electrical connection with a base of the BJT, and in which the reverse voltage applied to the back gate of the FET creates a continuously variable capacitance in a channel of the FET.
A FET, comprising:
- an integrated bipolar junction transistor (BJT) and field effect transistor (FET), in which a back gate of the FET shares an electrical connection with a base of the BJT, and in which a reverse voltage applied to one of the back gate of the FET or a front gate of the FET creates a continuously variable capacitance in a channel of the FET.
A CMOS NFET, comprising:
- a field effect transistor (FET), in which a front gate of the FET shares an electrical connection with a body of the FET, and in which a reverse voltage applied to one of the front gate of the FET or the body of the FET creates a continuously variable capacitance in a channel of the FET, and in which the CMOS NFET is implemented as a radio frequency pass gate.
A semiconductor die comprising:
- a substrate configured to receive a plurality of components;
- and
- varactor disposed on the substrate, the varactor including a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), a back gate of the FET sharing an electrical connection with a base of the BJT such that a reverse voltage applied to the back gate of the FET creates a continuously variable capacitance in a channel of the FET.
A radio-frequency (RF) module comprising:
- a packaging substrate configured to receive a plurality of components;
- a die mounted on the packaging substrate, the die having a varactor that includes a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), a back gate of the FET sharing an electrical connection with a base of the BJT such that a reverse voltage applied to the back gate of the FET creates a continuously variable capacitance in a channel of the FET;
- and
- a plurality of connectors configured to provide electrical connections between the die and the packaging substrate.
1 more element
A radio-frequency (RF) device comprising:
- a transmitter configured to generate an RF signal;
- an antenna in communication with the transmitter to facilitate transmission of the RF signal;
- and
- an RF module disposed between the transmitter and the antenna and configured to process the RF signal, the RF module having a varactor that includes a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), a back gate of the FET sharing an electrical connection with a base of the BJT such that a reverse voltage applied to the back gate of the FET creates a continuously variable capacitance in a channel of the FET.
1 more element
A method for fabricating a varactor, the method comprising:
- forming a bipolar junction transistor (BJT);
- and
- forming a field effect transistor (FET) to be integrated with at least a portion of the BJT, a back gate of the FET sharing an electrical connection with a base of the BJT such that an application of a reverse voltage to the back gate of the FET creates a continuously variable capacitance in a channel of the FET.
Dependencies are inferred from the claim text.