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US 2012/0235712 A1Published application
High voltage semiconductor device and driving circuit
AssigneeFuji Electri Co., Ltd.
InventorMasaharu Yamaji
Life of this patent
Estimating the term…
Abstract
A high voltage semiconductor device is provided and includes an n−-type region encompassed by a p− well region and is provided on a p−-type silicon substrate. A drain n+-region is connected to a drain electrode. A p base region is formed so as to be separate from and encompass the drain n+-region. A source n+-region is formed in the p base region. Further, a p−-region is provided that passes through the n−-type region to the silicon substrate. The n−-type region is divided, by the p−-region, into a drift n−-type region having the drain n+-region and a floating n−-type region having a floating electric potential.
Claims24
1-22. (canceled)
A high voltage semiconductor device comprising:
- a substrate of a first conductivity type;
- a voltage blocking region of a second conductivity type positioned on the substrate, the voltage blocking region including a drift region having a drift surface layer, and a floating region having a floating electric potential;
- a drain diffused region of the second conductivity type formed in said drift surface layer;
- a base region of the first conductivity type having a base surface layer, said base region surrounding the drain diffused region and contacting the voltage blocking region;
- a pick-up region of the first conductivity type formed in the base surface layer;
- a first electrode receiving a first voltage and electrically connected to the pick-up region;
- a second electrode receiving a second voltage higher than the first voltage and electrically connected to the drain diffused region;
- a separating region that contacts the substrate and encompasses the voltage blocking region and the base region;
- a semiconductor region of the first conductivity type, positioned between the drift region and the floating region so as to separate them from each other, said semiconductor region contacting the separating region and the substrate;
- a source diffused region of the second conductivity type formed in the base surface layer and disposed on the drift region, the source diffused region being connected to the first electrode;
- a gate electrode disposed on the base surface layer between a portion of the drift region and the source diffused region;
- and
- a base insulating film disposed on the base surface layer between the gate electrode and the base surface layer.
10 more elements
A high voltage semiconductor device comprising:
- a substrate of a first conductivity type;
- a voltage blocking region of a second conductivity type positioned on the substrate, the voltage blocking region including a drift region having a drift surface layer, and a floating region having a floating electric potential;
- a collector diffused region of the first conductivity type formed in said drift surface layer;
- a base region of the first conductivity type having a base surface layer and encompassing the collector diffused region, the base region being separate from the collector diffused region and contacting the voltage blocking region;
- a pick-up region of the first conductivity type disposed in the base surface layer;
- a first electrode receiving a first voltage and electrically connected to the pick-up region;
- a second electrode receiving a second voltage higher than the first voltage and electrically connected to the collector diffused region;
- a separating region that contacts the substrate and surrounds the voltage blocking region and the base region;
- a semiconductor region of the first conductivity type, provided between the drift region and the floating region so as to separate them from each other, and contacting the separating region and the substrate;
- an emitter diffused region of the second conductivity type formed in the base surface layer and disposed on the drift region, the emitter diffused region connected to the first electrode;
- a gate electrode disposed on the base surface layer between a portion of the drift region and the emitter diffused region;
- and
- a base insulating film disposed on the base surface layer between the gate electrode and the base surface layer.
10 more elements
Dependencies are inferred from the claim text.