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US 2012/0235304 A1Published application
Ultraviolet (uv)-reflecting film for beol processing
AssigneeGlobalfoundries Inc.
InventorsTorsten Huisinga, Ralf Richter, Ulrich Mayer
Life of this patent
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Abstract
Semiconductor devices are formed with a dielectric stack by forming an UV reflecting layer between cured and uncured ULK layers during BEOL processing. Embodiments include forming a first ultra low-k (ULK) layer on a semiconductor element, curing the first ULK layer, forming an ultraviolet (UV) reflecting layer on the first ULK layer, forming a second ULK layer on the UV reflecting layer, and irradiating the second ULK layer with UV light.
Claims20
A method comprising:
- providing a first ultra low-k (ULK) layer on a semiconductor element;
- curing the first ULK layer;
- providing an ultraviolet (UV) reflecting layer on the first ULK layer;
- providing a second ULK layer on the UV reflecting layer;
- and
- irradiating the second ULK layer with UV light.
3 more elements
A device comprising:
- a first UV cured ultra low-k (ULK) layer over a semiconductor element;
- an ultraviolet (UV) reflecting layer over the first ULK layer;
- and
- a second ULK layer over the UV reflecting layer.
1 more element
A method comprising:
- providing a first NBLOK layer over a semiconductor structure including at least one semiconductor element;
- providing a first ULK layer over the first NBLOK layer;
- irradiating UV light on the first ULK layer;
- etching trenches in the first ULK layer;
- filling the trenches with metal to form metal interconnects;
- providing a second NBLOK layer, over the metal interconnects, to a thickness of 200 Å to 1000 Å;
- providing a silicon oxide UV reflecting layer to a thickness of 3 nm to 10 nm over the second NBLOK layer;
- providing a second ULK layer over the second NBLOK layer;
- and
- irradiating UV light on the second ULK layer.
7 more elements
Dependencies are inferred from the claim text.